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dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorHuang, Wen-Chunen_US
dc.contributor.authorKo, Cheng-Taen_US
dc.contributor.authorYang, Zhengen_US
dc.contributor.authorHu, Sheng-Hsiangen_US
dc.contributor.authorLeu, Jihperngen_US
dc.contributor.authorChou, Keng C.en_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:36:48Z-
dc.date.available2014-12-08T15:36:48Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2014.2343793en_US
dc.identifier.urihttp://hdl.handle.net/11536/25196-
dc.description.abstractIn this paper, the interfacial adhesion strength between metal layer and benzocyclobutene (BCB) polymer dielectric in 3-D integration applications is investigated. The effects of layer thickness, layer stacking order, and additional adhesion layer of titanium (Ti) layer between copper (Cu) and BCB polymer are investigated. Surprisingly, the conventional titanium adhesion layer commonly used in the semiconductor industry weakens the interfacial adhesion strength between copper and BCB. Additionally, to figure out the interfacial adhesion mechanisms, the interfacial structures probed by sum-frequency-generation vibrational spectroscopy are correlated to the adhesion strengths measured from corresponding sample interfaces. It is found that ordered C-H groups at the metal/BCB interface, such as titanium/BCB or molybdenum/BCB, lead to weak interfacial adhesion strength, whereas disordered interfaces, i.e., copper/BCB, lead to strong interfacial adhesion strength.en_US
dc.language.isoen_USen_US
dc.subjectAdhesionen_US
dc.subjectbenzocyclobutene (BCB)en_US
dc.subject3-D integrationen_US
dc.titleAdhesion Investigation Between Metal and Benzocyclobutene (BCB) Polymer Dielectric Materials in 3-D Integration Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2014.2343793en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume14en_US
dc.citation.issue3en_US
dc.citation.spage914en_US
dc.citation.epage920en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000341984600018-
dc.citation.woscount0-
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