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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiou, Shan-Hawen_US
dc.contributor.authorHuang, Chiung-Huien_US
dc.contributor.authorChiu, Yu-Chienen_US
dc.date.accessioned2014-12-08T15:36:48Z-
dc.date.available2014-12-08T15:36:48Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2014.2332395en_US
dc.identifier.urihttp://hdl.handle.net/11536/25197-
dc.description.abstractThis study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.en_US
dc.language.isoen_USen_US
dc.subjectGetteringen_US
dc.subjectInGaZnO (IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjecttitanium oxide (TiOx)en_US
dc.titleAn Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2014.2332395en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume13en_US
dc.citation.issue5en_US
dc.citation.spage933en_US
dc.citation.epage938en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000342083000008-
dc.citation.woscount0-
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