标题: | An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor |
作者: | Hsu, Hsiao-Hsuan Chang, Chun-Yen Cheng, Chun-Hu Chiou, Shan-Haw Huang, Chiung-Hui Chiu, Yu-Chien 交大名义发表 电子工程学系及电子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
关键字: | Gettering;InGaZnO (IGZO);thin-film transistor (TFT);titanium oxide (TiOx) |
公开日期: | 1-九月-2014 |
摘要: | This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing. |
URI: | http://dx.doi.org/10.1109/TNANO.2014.2332395 http://hdl.handle.net/11536/25197 |
ISSN: | 1536-125X |
DOI: | 10.1109/TNANO.2014.2332395 |
期刊: | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
Volume: | 13 |
Issue: | 5 |
起始页: | 933 |
结束页: | 938 |
显示于类别: | Articles |
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