完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, RH | en_US |
dc.contributor.author | Chang, CC | en_US |
dc.contributor.author | Cheng, CM | en_US |
dc.date.accessioned | 2014-12-08T15:36:52Z | - |
dc.date.available | 2014-12-08T15:36:52Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.issn | 0268-3768 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25266 | - |
dc.identifier.uri | http://dx.doi.org/10.1007/s00170-003-1889-2 | en_US |
dc.description.abstract | A new method of fabricating micromould inserts that is compatible with semiconductor manufacturing is proposed. Diffusion of phosphorous at a high temperature is first used to increase the electric conductivity of the surface of the silicon wafer to generate a silicon-based seed layer for electroforming. If the process temperature and the duration of doping with phosphorous are controlled, then the electric conductivity of this novel silicon-based seed layer can be expected to equal that of a metal seed layer. Then, a structure layer of amorphous silicon is successfully formed onto the silicon-based seed layer, by plasma enhanced chemical vapor deposition (PECVD). The structure layer has none of the defects that would be present if a metal seed layer were used to replace the silicon-based seed layer. Finally, a silicon-based master microstructure was created by using ICPRIE to etch the structure layer. The silicon-based master has been demonstrated to be useable in successfully fabricating, by electroforming, a metal micromould insert with a large area and high aspect ratio. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | doping | en_US |
dc.subject | electroforming | en_US |
dc.subject | ICP-RIE | en_US |
dc.subject | micromould insert | en_US |
dc.subject | microstructures | en_US |
dc.subject | PECVD | en_US |
dc.subject | seed layer | en_US |
dc.title | Fabricating a micromould insert using a novel process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/s00170-003-1889-2 | en_US |
dc.identifier.journal | INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY | en_US |
dc.citation.volume | 25 | en_US |
dc.citation.issue | 7-8 | en_US |
dc.citation.spage | 678 | en_US |
dc.citation.epage | 684 | en_US |
dc.contributor.department | 機械工程學系 | zh_TW |
dc.contributor.department | Department of Mechanical Engineering | en_US |
dc.identifier.wosnumber | WOS:000228978700007 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |