標題: Investigation of Random Telegraph Noise Amplitudes in Hafnium Oxide Resistive Memory Devices
作者: Chung, Y. T.
Liu, Y. H.
Su, P. C.
Cheng, Y. H.
Wang, Tahui
Chen, M. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2014
摘要: Statistical characterization of two-level random telegraph noise (RTN) amplitude distribution in a hafnium oxide resistive memory has been performed. We find that two-level RTN in HRS exhibits a large amplitude distribution tail, as compared to LRS. To investigate an RTN trap position in a hafnium oxide film, we measure the dependence of electron capture and emission times of RTN on applied read voltage. A correlation between an RTN trap position and RTN amplitude is found. A quasi-two-dimensional RTN amplitude simulation based on trap-assisted electron sequential tunneling is developed. Our study shows that RTN traps in a rupture region of a hafnium oxide film are responsible for an RTN large-amplitude tail in HRS mostly.
URI: http://hdl.handle.net/11536/25274
ISBN: 978-1-4799-3317-4
ISSN: 1541-7026
期刊: 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
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Appears in Collections:Conferences Paper