標題: Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory
作者: Huang, Chun-Yang
Ho, Yen-Ting
Hung, Chung-Jung
Tseng, Tseung-Yuen
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Oct-2014
摘要: Fully transparent and stable resistive switching characteristics in resistive random access memory (RRAM) device consisting of ITO/Ga doped ZnO (GZO)/ZnO/ITO architecture are proposed. The GZO nanorods with well aligned and extremely dense properties are considered as a thin film for RRAM device. The oxygen vacancies can be confined and migrate along grain boundaries in the GZO nanorod film. Therefore, the weakest point for formation and rupture of conductive filament can be limited at the interface between GZO nanorod film and ZnO seeding layer. Compared with ITO/ZnO/ITO device, a significant improvement in the distribution of high resistance state (HRS) and low resistance state (LRS) during resistance switching is demonstrated in the present device. In addition, a high endurance of more than 7000 cycles with the resistance ratios of HRS/LRS about 200 times is achieved in this device. The ITO/GZO/ZnO/ITO device is a good candidate for the transparent RRAM application.
URI: http://dx.doi.org/10.1109/TED.2014.2343631
http://hdl.handle.net/11536/25362
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2343631
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 10
起始頁: 3435
結束頁: 3441
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