標題: LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
作者: CHEN, TP
LEI, TF
LIN, HC
CHANG, CY
HSIEH, WY
CHEN, LJ
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 4-Apr-1994
摘要: A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H6 (1% in H-2). The growth temperature was as low as 550-degrees-C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2 x 10(22) cm-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.
URI: http://dx.doi.org/10.1063/1.111777
http://hdl.handle.net/11536/2538
ISSN: 0003-6951
DOI: 10.1063/1.111777
期刊: APPLIED PHYSICS LETTERS
Volume: 64
Issue: 14
起始頁: 1853
結束頁: 1855
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