標題: Process improvement and reliability characteristics of spin-on poly-3-hexylthiophene thin-film transistor
作者: Wang, SC
Lou, JC
Liou, BL
Lin, RX
Yeh, CF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: Poly-3-hexylthiophene (P3HT) based thin-film transistors were fabricated. Various spin-coating conditions including spin speeds, curing temperatures, solvents, and weight percentages of P3HT have been examined. It was found that the P3HT of 0.3 wt % dissolved in chloroform contributes to the lowest surface roughness and the highest ON/OFF current ratio over four orders of magnitude. Besides, the anomalous gate leakage current was eliminated successfully by growing a thick field oxide layer in the source/drain regions. Through O-2, N-2, H2O, or high-vacuum treatments, it was confirmed that the threshold voltage and mobility of organic devices degrades rapidly when the P3HT-based organic thin-film transistors were exposed to the O-2 atmosphere within 8 h. Moreover, the threshold voltage increases under a positive gate bias stress while the V-th decreases after a negative gate bias stress. The mechanism was attributed to the polarization effect of P3HT film. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25438
http://dx.doi.org/10.1149/1.1829417
ISSN: 0013-4651
DOI: 10.1149/1.1829417
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 152
Issue: 1
起始頁: G50
結束頁: G56
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