Effects of oxygen plasma ashing on barrier dielectric SiCN film

Abstract

Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si-O-2 bonds appear at the surface of SiCN film after O-2 plasma ashing. The formation of the oxidized layer, SiOxCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O-2 plasma ashing. (C) 2004 The Electrochemical Society.