標題: Effects of oxygen plasma ashing on barrier dielectric SiCN film
作者: Chen, CW
Chang, TC
Liu, PT
Tsai, TM
Tseng, TY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2005
摘要: Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si-O-2 bonds appear at the surface of SiCN film after O-2 plasma ashing. The formation of the oxidized layer, SiOxCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O-2 plasma ashing. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25473
http://dx.doi.org/10.1149/1.1833666
ISSN: 1099-0062
DOI: 10.1149/1.1833666
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 1
起始頁: G11
結束頁: G13
Appears in Collections:Articles