標題: | Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide |
作者: | Chen, CW Chien, CH Perng, TH Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2005 |
摘要: | The device degradation caused by the hot-electron-induced electron trapping in the ultrathin (equivalent oxide thickness = 1.6 nm) nitrided gate oxide for the 0.13 mu m n-metal oxide semiconductor field effect transistors (n-MOSFETs) has been investigated. We have found that the nitrogen, incorporated in the gate dielectrics by a variety of popular techniques including Si3N4/SiO2 (N/O) stack, NO annealing, and plasma nitridation, results in enhanced hot-electron-induced device degradations as compared to the conventional gate oxide counterpart. The enhanced hot-electron degradations are attributed to the electron trap generation in the ultrathin gate dielectric rather than the interface state generation as a result of nitrogen incorporation. (c) 2005 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/25475 http://dx.doi.org/10.1149/1.1938851 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.1938851 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 8 |
Issue: | 8 |
起始頁: | G187 |
結束頁: | G189 |
顯示於類別: | 期刊論文 |