標題: Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide
作者: Chen, CW
Chien, CH
Perng, TH
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: The device degradation caused by the hot-electron-induced electron trapping in the ultrathin (equivalent oxide thickness = 1.6 nm) nitrided gate oxide for the 0.13 mu m n-metal oxide semiconductor field effect transistors (n-MOSFETs) has been investigated. We have found that the nitrogen, incorporated in the gate dielectrics by a variety of popular techniques including Si3N4/SiO2 (N/O) stack, NO annealing, and plasma nitridation, results in enhanced hot-electron-induced device degradations as compared to the conventional gate oxide counterpart. The enhanced hot-electron degradations are attributed to the electron trap generation in the ultrathin gate dielectric rather than the interface state generation as a result of nitrogen incorporation. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25475
http://dx.doi.org/10.1149/1.1938851
ISSN: 1099-0062
DOI: 10.1149/1.1938851
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 8
起始頁: G187
結束頁: G189
顯示於類別:期刊論文