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dc.contributor.authorCHYAN, YFen_US
dc.contributor.authorSZE, SMen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorREIF, Ren_US
dc.date.accessioned2014-12-08T15:04:02Z-
dc.date.available2014-12-08T15:04:02Z-
dc.date.issued1994-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.1803en_US
dc.identifier.urihttp://hdl.handle.net/11536/2548-
dc.description.abstractWe report the theoretical investigation of the effect of Ge concentration on both static and high-frequency performances in polycrystalline silicon emitter GexSi1-x heterojunction bipolar transistors (HBTs). The calculation is carried out up to 0.95 V, before the onset of the Kirk effect [C. T. Kirk: IEEE Trans. Electron Devices ED-9 (1962) 164]. From this model, we find that the current gain, transconductance, cutoff frequency, and maximum oscillation frequency increase with increasing Ge concentration. In addition, the base transit time and the switching delay time in the emitter-coupled logic circuit slightly decrease as Ge content increases. Furthermore, it shows that the high-level injection eff ect becomes more pronounced in the GexSi1-x HBT as Ge concentration increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of GexSi1-x HBTs operating under high-level injection.en_US
dc.language.isoen_USen_US
dc.subjectHETEROJUNCTION BIPOLAR TRANSISTORen_US
dc.subjectHIGH-LEVEL INJECTIONen_US
dc.subjectCUTOFF FREQUENCYen_US
dc.subjectMAXIMUM OSCILLATION FREQUENCYen_US
dc.subjectSWITCHING DELAY TIMEen_US
dc.titleEFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.1803en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue4Aen_US
dc.citation.spage1803en_US
dc.citation.epage1808en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994NR95600017-
dc.citation.woscount0-
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