Numerical and experimental analysis of Cu diffusion in plasma-treated tungsten barrier

doi:10.1149/1.1833631

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, KC	en_US
dc.contributor.author	Wu, WF	en_US
dc.contributor.author	Chen, JC	en_US
dc.contributor.author	Pan, TJ	en_US
dc.contributor.author	Chao, CG	en_US
dc.date.accessioned	2014-12-08T15:37:09Z	-
dc.date.available	2014-12-08T15:37:09Z	-
dc.date.issued	2005	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25530	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.1833631	en_US
dc.description.abstract	This work investigates Cu diffusion in sputtered and N2O plasma-treated W films. N2O plasma-treated W barrier has a nanostructured surface layer and shows high thermal stability and the best barrier properties. Also investigated herein are the lattice and grain boundary diffusivities extracted from the Cu penetration depth profiles using the Whipple analysis of grain boundary diffusion and Fick's second law of diffusion. Analysis indicates that the diffusion models correlate well with experimental results. (C) 2004 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Numerical and experimental analysis of Cu diffusion in plasma-treated tungsten barrier	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1833631	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	152	en_US
dc.citation.issue	1	en_US
dc.citation.spage	G83	en_US
dc.citation.epage	G91	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000225864900076	-
dc.citation.woscount	5	-
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