MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission

doi:10.1016/j.jcrysgro.2004.08.092

標題:	MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
作者:	Kuo, HC Yao, HH Chang, YH Chang, YA Tsai, MY Hsieh, J Chang, EY Wang, SC 材料科學與工程學系光電工程學系 Department of Materials Science and Engineering Department of Photonics
關鍵字:	metalorganic chemical vapor deposition;antimonides;semiconducting indium compounds;optical fiber devices;vertical cavity surface emitting laser
公開日期:	10-Dec-2004
摘要:	1.27mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below similar to35% when the temperature is raised from room temperature to 70degreesC. With only 5 mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor MCEF) of similar to5.25GHz/(mA)(1/2). The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 mum commercial applications. (C) 2004 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2004.08.092 http://hdl.handle.net/11536/25552
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.08.092
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	272
Issue:	1-4
起始頁:	538
結束頁:	542
Appears in Collections:	Conferences Paper

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