標題: COPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANE
作者: CHIOU, JC
CHEN, YJ
CHEN, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: COPPER CHEMICAL VAPOR DEPOSITION SELECTIVE DEPOSITION;DEPOSITION MECHANISM;DEPOSITION PARAMETERS;METALLIZATION
公開日期: 1-Apr-1994
摘要: Copper chemical vapor deposition using Cu-hexafluoroacetylacetonate (hfac) trimethylvinylsilane (TMVS) as precursor was performed in a cold-wall low pressure chemical vapor deposition (CVD) reactor. The design and operation of the reactor are described. Copper deposition on thermal SiO2, W, and CoSi2 substrate surfaces was investigated over the temperature range of 160-300-degrees-C and pressure range of 10-1000 mTorr. The activation energies of Cu CVD were determined to be 13.33 and 11.54 kcal/mole for the W and CoSi2 substrates, respectively. The dependence of film resistivity, grain size, and growth rate on deposition pressure and temperature were also investigated. The film uniformity was found to be better than ten percent over a 4-inch diameter substrate. Experimental results also show that selective deposition can be achieved at a pressure of 10 mTorr within the temperature range of 160-200-degrees-C. In addition, hydrofluoric acid dipping was found to modify the SiO2 surface and influence the copper deposition on it.
URI: http://dx.doi.org/10.1007/BF02671218
http://hdl.handle.net/11536/2556
ISSN: 0361-5235
DOI: 10.1007/BF02671218
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 23
Issue: 4
起始頁: 383
結束頁: 390
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