標題: | Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors |
作者: | Wu, JW You, JW Ma, HC Cheng, CC Chang, CS Huang, GW Wang, T 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 22-十一月-2004 |
摘要: | Low frequency flicker noise in n-type metal-oxide-semiconductor field effect transistors (n-MOSFETs) with 15 Angstrom gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model. (C) 2004 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1827930 http://hdl.handle.net/11536/25625 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1827930 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 85 |
Issue: | 21 |
起始頁: | 5076 |
結束頁: | 5077 |
顯示於類別: | 期刊論文 |