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dc.contributor.authorLiu, PCen_US
dc.contributor.authorLu, CLen_US
dc.contributor.authorWu, YCSen_US
dc.contributor.authorCheng, JHen_US
dc.contributor.authorOuyang, Hen_US
dc.date.accessioned2014-12-08T15:37:17Z-
dc.date.available2014-12-08T15:37:17Z-
dc.date.issued2004-11-22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1823592en_US
dc.identifier.urihttp://hdl.handle.net/11536/25629-
dc.description.abstractThe electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 degreesC. When temperatures increased above 400 degreesC, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 degreesC. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEffects of annealing temperature on electrical resistance of bonded n-GaAs wafersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1823592en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume85en_US
dc.citation.issue21en_US
dc.citation.spage4831en_US
dc.citation.epage4833en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000225300600001-
dc.citation.woscount6-
Appears in Collections:Articles


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