Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

doi:10.1063/1.1823592

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DC 欄位	值	語言
dc.contributor.author	Liu, PC	en_US
dc.contributor.author	Lu, CL	en_US
dc.contributor.author	Wu, YCS	en_US
dc.contributor.author	Cheng, JH	en_US
dc.contributor.author	Ouyang, H	en_US
dc.date.accessioned	2014-12-08T15:37:17Z	-
dc.date.available	2014-12-08T15:37:17Z	-
dc.date.issued	2004-11-22	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1823592	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25629	-
dc.description.abstract	The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 degreesC. When temperatures increased above 400 degreesC, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 degreesC. (C) 2004 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1823592	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	85	en_US
dc.citation.issue	21	en_US
dc.citation.spage	4831	en_US
dc.citation.epage	4833	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000225300600001	-
dc.citation.woscount	6	-
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