Title: | Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric |
Authors: | Wu, N Zhang, QC Zhu, CX Chan, DSH Li, MF Balasubramanian, N Chin, A Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Nov-2004 |
Abstract: | An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH4 annealing was implemented prior to HfO2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Angstrom and a leakage current of 1.16x10(-5) A/cm(2) at 1 V gate bias was achieved for TaN/HfO2/Ge MOS capacitors with the SiH4 surface treatment. (C) 2004 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1812835 http://hdl.handle.net/11536/25656 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1812835 |
Journal: | APPLIED PHYSICS LETTERS |
Volume: | 85 |
Issue: | 18 |
Begin Page: | 4127 |
End Page: | 4129 |
Appears in Collections: | Articles |
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