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dc.contributor.authorChen, JKen_US
dc.contributor.authorKo, FHen_US
dc.contributor.authorHsieh, KFen_US
dc.contributor.authorChou, CTen_US
dc.contributor.authorChang, FCen_US
dc.date.accessioned2014-12-08T15:37:23Z-
dc.date.available2014-12-08T15:37:23Z-
dc.date.issued2004-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1815305en_US
dc.identifier.urihttp://hdl.handle.net/11536/25705-
dc.description.abstractWe have applied trichloro(3,3,3-trifluoropropyl)silane (FPTS) and trichloro(1H, 1H, 2H, 2H-perfluorooctyl)silane (FOTS) for the preparation of self-assembled film on a silicon mold for use as releasing, antisticking layers for nanoimprint lithography. From contact angle measurements. we have determined the surface energies of the molds in terms of their Lewis acid, Lewis base, and van der Waals components. The surface energies of the FPTS- and FOTS-derived film decreased as the annealing temperature and immersion time increased. Suitable self-assembled films were prepared by annealing at 150 degreesC for at least 1 h. The surface roughnesses of the self-assembled film formed from FPTS and FOTS were 0.468 and 0.189 nm. respectively. The lower surface energy and roughness of the FOTS-derived film on the silicon mold prevent both the adhesion and defect-formation problems from occurring during resist imprinting. The self-assembled films prepared on the mold are resistant to immersion in acid and base, but treatment with oxygen plasma has an adverse effect on these molds' stabilities. (C) 2004 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleEffect of fluoroalkyl substituents on the reactions of alkylchlorosilanes with mold surfaces for nanoimprint lithographyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.1815305en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume22en_US
dc.citation.issue6en_US
dc.citation.spage3233en_US
dc.citation.epage3241en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000226439800129-
Appears in Collections:Conferences Paper


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