完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Chen, JK | en_US |
dc.contributor.author | Ko, FH | en_US |
dc.contributor.author | Hsieh, KF | en_US |
dc.contributor.author | Chou, CT | en_US |
dc.contributor.author | Chang, FC | en_US |
dc.date.accessioned | 2014-12-08T15:37:23Z | - |
dc.date.available | 2014-12-08T15:37:23Z | - |
dc.date.issued | 2004-11-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.1815305 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25705 | - |
dc.description.abstract | We have applied trichloro(3,3,3-trifluoropropyl)silane (FPTS) and trichloro(1H, 1H, 2H, 2H-perfluorooctyl)silane (FOTS) for the preparation of self-assembled film on a silicon mold for use as releasing, antisticking layers for nanoimprint lithography. From contact angle measurements. we have determined the surface energies of the molds in terms of their Lewis acid, Lewis base, and van der Waals components. The surface energies of the FPTS- and FOTS-derived film decreased as the annealing temperature and immersion time increased. Suitable self-assembled films were prepared by annealing at 150 degreesC for at least 1 h. The surface roughnesses of the self-assembled film formed from FPTS and FOTS were 0.468 and 0.189 nm. respectively. The lower surface energy and roughness of the FOTS-derived film on the silicon mold prevent both the adhesion and defect-formation problems from occurring during resist imprinting. The self-assembled films prepared on the mold are resistant to immersion in acid and base, but treatment with oxygen plasma has an adverse effect on these molds' stabilities. (C) 2004 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of fluoroalkyl substituents on the reactions of alkylchlorosilanes with mold surfaces for nanoimprint lithography | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1116/1.1815305 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 22 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 3233 | en_US |
dc.citation.epage | 3241 | en_US |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | 奈米中心 | zh_TW |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.contributor.department | Nano Facility Center | en_US |
dc.identifier.wosnumber | WOS:000226439800129 | - |
顯示於類別: | 會議論文 |