ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION

標題:	ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION
作者:	WU, SL LEE, CL LEI, TF CHEN, CF CHEN, LJ HO, KZ LING, YC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Apr-1994
摘要:	In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900-degrees-C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device.
URI:	http://dx.doi.org/10.1109/55.285410 http://hdl.handle.net/11536/2570
ISSN:	0741-3106
DOI:	10.1109/55.285410
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	15
Issue:	4
起始頁:	120
結束頁:	122
Appears in Collections:	Articles

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