CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER

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DC Field	Value	Language
dc.contributor.author	YEH, SC	en_US
dc.contributor.author	SU, S	en_US
dc.contributor.author	LU, JP	en_US
dc.date.accessioned	2014-12-08T15:04:04Z	-
dc.date.available	2014-12-08T15:04:04Z	-
dc.date.issued	1994-03-15	en_US
dc.identifier.issn	0168-9002	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2579	-
dc.description.abstract	Silicon strip detectors with single-sided readout were designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by electrical measurements. A 200 nm gate oxide thickness was chosen to provide a coupling capacitance of 9.75 pF/cm. A full depletion voltage of 80 V and leakage currents of 0.29, 0.64, 0.97, and 1.01 nA/strip for strip lengths of 2, 5, 7, and 8 cm, respectively were measured.	en_US
dc.language.iso	en_US	en_US
dc.title	CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.journal	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT	en_US
dc.citation.volume	342	en_US
dc.citation.issue	1	en_US
dc.citation.spage	49	en_US
dc.citation.epage	51	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994NB21500008	-
Appears in Collections:	Conferences Paper