俱電容耦合及本體偏壓之雙面矽微條探測器

Abstract

在此論文中,主要是探討具有耦合電容和本體矽偏壓電阻之雙面矽微條探 測器的設計與實現,為了簡化雙面矽微條探測器之結構,我們使用晶片本體 做為偏壓電阻的方法,相較於以往複晶矽偏壓電阻的方法,可以節省相當多 的製程時間。P型微條的間距為25微米，N型微條的間距為50微米。而其讀 出間距分別為50微米和100微米。這些製作完成的探測器分別做電性量測 與紅外線雷射照射試驗,從電性與空間響應的結果,我們證實此種雙面矽微 條探測器的設計,符合可以工作的要求。 This thesis deals with the design and implementation of a double sided silicon microstrip detector with capacitive readout and integrated bias coupling. In order to simplify the SMD structure , we use the method of accumulation layer to form the bias resistor . It saves considerable time on the process when compared to using polysilicon bias resistor .The pitch of P+ strips is 25 um and the pitch of N+ strips is 50 um. The readout pitch of both are 50 um and 100 um, respectively. The detectors are tested by electrical measurement and illumination of infrared laser diode . From the results of the electrical properties and spatial response, we demonstrate that our design of the double sided SMD can work.