CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER

Abstract

Silicon strip detectors with single-sided readout were designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by electrical measurements. A 200 nm gate oxide thickness was chosen to provide a coupling capacitance of 9.75 pF/cm. A full depletion voltage of 80 V and leakage currents of 0.29, 0.64, 0.97, and 1.01 nA/strip for strip lengths of 2, 5, 7, and 8 cm, respectively were measured.