標題: CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER
作者: YEH, SC
SU, S
LU, JP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Mar-1994
摘要: Silicon strip detectors with single-sided readout were designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by electrical measurements. A 200 nm gate oxide thickness was chosen to provide a coupling capacitance of 9.75 pF/cm. A full depletion voltage of 80 V and leakage currents of 0.29, 0.64, 0.97, and 1.01 nA/strip for strip lengths of 2, 5, 7, and 8 cm, respectively were measured.
URI: http://hdl.handle.net/11536/2579
ISSN: 0168-9002
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume: 342
Issue: 1
起始頁: 49
結束頁: 51
Appears in Collections:Conferences Paper