標題: | Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots |
作者: | Hsu, K. S. Chiu, T. T. Lin, Wei-Hsun Chen, K. L. Shih, M. H. Lin, Shih-Yen Chang, Yia-Chung 光電工程學系 Department of Photonics |
公開日期: | 31-Jan-2011 |
摘要: | Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 mu m was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was achieved for this microdisk. A high threshold characteristic temperature of 77 K was also observed. It is found that the lasing wavelength matches closely with the first-order whispering-gallery mode of the cavity as obtained from the finite-element method simulation. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3543839] |
URI: | http://dx.doi.org/10.1063/1.3543839 http://hdl.handle.net/11536/25859 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3543839 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 98 |
Issue: | 5 |
結束頁: | |
Appears in Collections: | Articles |
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