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dc.contributor.authorChiang, C. H.en_US
dc.contributor.authorChen, K. M.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorYeh, Y. S.en_US
dc.contributor.authorLee, W. I.en_US
dc.contributor.authorChen, J. F.en_US
dc.contributor.authorLin, K. L.en_US
dc.contributor.authorHsiao, Y. L.en_US
dc.contributor.authorHuang, W. C.en_US
dc.contributor.authorChang, E. Y.en_US
dc.date.accessioned2014-12-08T15:37:38Z-
dc.date.available2014-12-08T15:37:38Z-
dc.date.issued2011-01-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2010.10.059en_US
dc.identifier.urihttp://hdl.handle.net/11536/25881-
dc.description.abstractMirror-like and pit-free non-polar a-plane (11-20) GaN films are grown on r-plane (1-102) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature- deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectCrystal morphologyen_US
dc.subjectNonpolaren_US
dc.subjectMOCVDen_US
dc.titleNonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor depositionen_US
dc.typeReviewen_US
dc.identifier.doi10.1016/j.apsusc.2010.10.059en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume257en_US
dc.citation.issue7en_US
dc.citation.spage2415en_US
dc.citation.epage2418en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000285963200001-
dc.citation.woscount9-
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