完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Mu, Szu-Pang | en_US |
dc.contributor.author | Wang, Yi-Ming | en_US |
dc.contributor.author | Yang, Hao-Yu | en_US |
dc.contributor.author | Chao, Mango C. -T. | en_US |
dc.contributor.author | Chen, Shi-Hao | en_US |
dc.contributor.author | Tseng, Chih-Mou | en_US |
dc.contributor.author | Tsai, Tsung-Ying | en_US |
dc.date.accessioned | 2014-12-08T15:37:43Z | - |
dc.date.available | 2014-12-08T15:37:43Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.isbn | 978-1-4244-8192-7 | en_US |
dc.identifier.issn | 1933-7760 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25931 | - |
dc.identifier.uri | http://dx.doi.org/10.1109/ICCAD.2010.5654118 | en_US |
dc.description.abstract | Coarse-grain multi-threshold CMOS (MTCMOS) is an effective power-gating technique to reduce IC's leakage power consumption by turning off idle devices with MTCMOS power switches. In this paper, we study the usage of coarse-grain MTCMOS power switches for both logic circuits and SRAMs, and then propose corresponding methods of testing stuck-open power switches for each of them. For logic circuits, a specialized ATPG framework is proposed to generate a longest possible robust test while creating as many effective transitions in the switch-centered region as possible. For SRAMs, a novel test algorithm is proposed to exercise the worst-case power consumption and performance when stuck-open power switches exist. The experimental results based on an industrial MTCMOS technology demonstrate the advantage of our proposed testing methods on detecting stuck-open power switches for both logic circuits and SRAMs, when compared to conventional testing methods. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Testing Methods for Detecting Stuck-open Power Switches in Coarse-Grain MTCMOS Designs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/ICCAD.2010.5654118 | en_US |
dc.identifier.journal | 2010 IEEE AND ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD) | en_US |
dc.citation.spage | 155 | en_US |
dc.citation.epage | 161 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000287997600024 | - |
顯示於類別: | 會議論文 |