標題: Influence of H(2)O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
作者: Chung, Wan-Fang
Chang, Ting-Chang
Li, Hung-Wei
Chen, Chi-Wen
Chen, Yu-Chun
Chen, Shih-Ching
Tseng, Tseung-Yuen
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 1-一月-2011
摘要: The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from 0.22 to 0.24 cm(2)/(V s), threshold voltage decreased from 6.6 to 4.4 V, and subthreshold swing changed from 0.77 to 1.27 V/dec. The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526097] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3526097
http://hdl.handle.net/11536/26086
ISSN: 1099-0062
DOI: 10.1149/1.3526097
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 3
起始頁: H114
結束頁: H116
顯示於類別:期刊論文