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dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorNiu, Mu-Chunen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorKu, Ming-Cheen_US
dc.date.accessioned2014-12-08T15:38:06Z-
dc.date.available2014-12-08T15:38:06Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2010.09.023en_US
dc.identifier.urihttp://hdl.handle.net/11536/26133-
dc.description.abstractThe vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectVertical transistoren_US
dc.subjectSpace-charge-limited currenten_US
dc.titleHigh-mobility polymer space-charge-limited transistor with grid-induced crystallinityen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2010.09.023en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume12en_US
dc.citation.issue1en_US
dc.citation.spage78en_US
dc.citation.epage82en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000285684600012-
dc.citation.woscount11-
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