標題: | High-mobility polymer space-charge-limited transistor with grid-induced crystallinity |
作者: | Chao, Yu-Chiang Niu, Mu-Chun Zan, Hsiao-Wen Meng, Hsin-Fei Ku, Ming-Che 物理研究所 光電工程學系 Institute of Physics Department of Photonics |
關鍵字: | Vertical transistor;Space-charge-limited current |
公開日期: | 1-一月-2011 |
摘要: | The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.orgel.2010.09.023 http://hdl.handle.net/11536/26133 |
ISSN: | 1566-1199 |
DOI: | 10.1016/j.orgel.2010.09.023 |
期刊: | ORGANIC ELECTRONICS |
Volume: | 12 |
Issue: | 1 |
起始頁: | 78 |
結束頁: | 82 |
顯示於類別: | 期刊論文 |