標題: High-mobility polymer space-charge-limited transistor with grid-induced crystallinity
作者: Chao, Yu-Chiang
Niu, Mu-Chun
Zan, Hsiao-Wen
Meng, Hsin-Fei
Ku, Ming-Che
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
關鍵字: Vertical transistor;Space-charge-limited current
公開日期: 1-一月-2011
摘要: The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2010.09.023
http://hdl.handle.net/11536/26133
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2010.09.023
期刊: ORGANIC ELECTRONICS
Volume: 12
Issue: 1
起始頁: 78
結束頁: 82
顯示於類別:期刊論文


文件中的檔案:

  1. 000285684600012.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。