Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Shih-Chengen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Shih-Yangen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorTsai, Yu-Tingen_US
dc.contributor.authorChen, Chi-Wenen_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorYeh(Huang), Fon-Shanen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2014-12-08T15:38:10Z-
dc.date.available2014-12-08T15:38:10Z-
dc.date.issued2011en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/26191-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3518710en_US
dc.description.abstractThis article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr(2)O(3)-based resistive random access memory (RRAM) with Pt/Cr(2)O(3)/TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/Cr(2)O(3) and Cr(2)O(3)/TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr(2)O(3) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518710] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleCarrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3518710en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume14en_US
dc.citation.issue2en_US
dc.citation.spageH103en_US
dc.citation.epageH106en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000285158800030-
dc.citation.woscount9-
Appears in Collections:Articles