完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Wang, C. H. | en_US |
dc.contributor.author | Ke, C. C. | en_US |
dc.contributor.author | Lee, C. Y. | en_US |
dc.contributor.author | Chang, S. P. | en_US |
dc.contributor.author | Chang, W. T. | en_US |
dc.contributor.author | Li, J. C. | en_US |
dc.contributor.author | Li, Z. Y. | en_US |
dc.contributor.author | Yang, H. C. | en_US |
dc.contributor.author | Kuo, H. C. | en_US |
dc.contributor.author | Lu, T. C. | en_US |
dc.contributor.author | Wang, S. C. | en_US |
dc.date.accessioned | 2014-12-08T15:38:13Z | - |
dc.date.available | 2014-12-08T15:38:13Z | - |
dc.date.issued | 2010-12-27 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3531753 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26206 | - |
dc.description.abstract | A graded-composition electron blocking layer (GEBL) with aluminum composition increasing along the [0001] direction was designed for c-plane InGaN/GaN light-emitting diodes (LEDs) by employing the band-engineering. The simulation results demonstrated that such GEBL can effectively enhance the capability of hole transportation across the EBL as well as the electron confinement. Consequently, the LED with GEBL grown by metal-organic chemical vapor deposition exhibited lower forward voltage and series resistance and much higher output power at high current density as compared to conventional LED. Meanwhile, the efficiency droop was reduced from 34% in conventional LED to only 4% from the maximum value at low injection current to 200 A/cm(2). (C) 2010 American Institute of Physics. [doi:10.1063/1.3531753] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3531753 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 97 | en_US |
dc.citation.issue | 26 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000285768100003 | - |
dc.citation.woscount | 74 | - |
顯示於類別: | 期刊論文 |