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dc.contributor.authorWang, CCen_US
dc.contributor.authorLin, HHen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2014-12-08T15:38:33Z-
dc.date.available2014-12-08T15:38:33Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.5997en_US
dc.identifier.urihttp://hdl.handle.net/11536/26393-
dc.description.abstractThe thermal stability of Cu/NiSi-contacted p(+)n shallow junction diodes was investigated with respect to their electrical characteristics and metallurgical reactions. The TaN/Cu/NiSi/p(+)n junction diode remained intact after 30min thermal annealing at temperatures of up to 350degreesC. Upon annealing at 375degreesC, a marked increase in reverse bias leakage current occurred, and secondary ion mass spectrometry (SIMS) analysis indicated that Cu started to penetrate into the NiSi-contacted shallow junction region. After a higher temperature annealing at 425degreesC, a Cu3Si phase was formed. The failure of the TaN/ Cu/NiSi/p(+)n junction diodes is attributed to the penetration of Cu through the NiSi layer into the junction region, leading to junction degradation by introducing deep-level trap states and the eventual formation Of Cu3Si.en_US
dc.language.isoen_USen_US
dc.subjectNiSien_US
dc.subjectCuen_US
dc.subjectshallow junctionen_US
dc.subjectthermal stabilityen_US
dc.subjectCu3Sien_US
dc.titleThermal stability of Cu/NiSi-contacted p(+)n shallow junctionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.5997en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue9Aen_US
dc.citation.spage5997en_US
dc.citation.epage6000en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224579000012-
dc.citation.woscount3-
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