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dc.contributor.authorYang, THen_US
dc.contributor.authorLuo, GLen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorHsieh, YCen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:38:37Z-
dc.date.available2014-12-08T15:38:37Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1781188en_US
dc.identifier.urihttp://hdl.handle.net/11536/26423-
dc.description.abstractA mechanism of interface blocking was proposed to reduce the threading dislocations in the SiGe and Ge layers on Si(100) substrates. In this work, epitaxial Si1-xGex/Si1-(x-y)Gex-y and Ge/SiyGe1-y layers were grown by UHV/CVD. It was surprisingly found that if the variation of the Ge composition, y, across the interface of Si1-xGex/Si1-(x-y)Gex-y or Ge/SiyGe1-y is higher than a certain value, most of the threading dislocations appear to be blocked and confined in the underlying Si1-(x-y)Gex-y or SiGe1-y layer by the interface. It implies that this finding can provide a simple way to grow high-quality relaxed SiGe and Ge layers on the Si substrates. (C) 2004 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleInterface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substratesen_US
dc.typeLetteren_US
dc.identifier.doi10.1116/1.1781188en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume22en_US
dc.citation.issue5en_US
dc.citation.spageL17en_US
dc.citation.epageL19en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000225048300001-
dc.citation.woscount10-
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