Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin films

doi:10.1063/1.1780596

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DC 欄位	值	語言
dc.contributor.author	Jayadevan, KP	en_US
dc.contributor.author	Liu, CY	en_US
dc.contributor.author	Tseng, TY	en_US
dc.date.accessioned	2014-12-08T15:38:41Z	-
dc.date.available	2014-12-08T15:38:41Z	-
dc.date.issued	2004-08-16	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1780596	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26469	-
dc.description.abstract	Nanocrystalline Ag-Ba0.5Sr0.5TiO3 (Ag-BST) composite thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. The voltage-dependent capacitance (C-V) and dielectric loss of the films decrease with increasing Ag up to 2 mol % due to a series configuration involving low dielectric interface layers and dense microstructures. The evidence for asymmetric distribution of charge carriers in the Ag-BST film is derived from C-V measurements. The dielectric tunability of BST film with 1 mol % Ag is comparable to that of pure BST. (C) 2004 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1780596	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	85	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1211	en_US
dc.citation.epage	1213	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000223233800040	-
dc.citation.woscount	12	-
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