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dc.contributor.authorJayadevan, KPen_US
dc.contributor.authorLiu, CYen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:38:41Z-
dc.date.available2014-12-08T15:38:41Z-
dc.date.issued2004-08-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1780596en_US
dc.identifier.urihttp://hdl.handle.net/11536/26469-
dc.description.abstractNanocrystalline Ag-Ba0.5Sr0.5TiO3 (Ag-BST) composite thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. The voltage-dependent capacitance (C-V) and dielectric loss of the films decrease with increasing Ag up to 2 mol % due to a series configuration involving low dielectric interface layers and dense microstructures. The evidence for asymmetric distribution of charge carriers in the Ag-BST film is derived from C-V measurements. The dielectric tunability of BST film with 1 mol % Ag is comparable to that of pure BST. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleDielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1780596en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume85en_US
dc.citation.issue7en_US
dc.citation.spage1211en_US
dc.citation.epage1213en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000223233800040-
dc.citation.woscount12-
Appears in Collections:Articles


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