標題: Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors
作者: Chen, MC
Ku, SH
Chan, CT
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-八月-2004
摘要: The impact of oxide soft breakdown location on threshold voltage hysteresis in partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors with an ultrathin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a drain-edge breakdown device, excess holes result from band-to-band tunneling flow to the floating body, thus causing threshold voltage variation in drain bias switching. In contrast, in a channel breakdown device, enhanced threshold hysteresis is observed during gate bias switching because of increased valence band electron tunneling. Our findings reveal that soft breakdown enhanced hysteresis effect can be a serious reliability issue in silicon-on-insulator devices with floating body configuration. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1773384
http://hdl.handle.net/11536/26472
ISSN: 0021-8979
DOI: 10.1063/1.1773384
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 96
Issue: 4
起始頁: 2297
結束頁: 2300
顯示於類別:期刊論文


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