標題: | Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs |
作者: | Chen, MC Tsai, CW Gu, SH Wang, TH 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2002 |
摘要: | The impact of soft breakdown location on V, hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause V, hysteresis in gate bias switching. As a contrast, in a drainedge breakdown device, enhanced V, hysteresis is observed during drain bias switching because of increased band-to-band tunneling current. |
URI: | http://hdl.handle.net/11536/18936 |
ISBN: | 0-7803-7352-9 |
期刊: | 40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM |
起始頁: | 404 |
結束頁: | 408 |
顯示於類別: | 會議論文 |