Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs

Abstract

The impact of soft breakdown location on V, hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause V, hysteresis in gate bias switching. As a contrast, in a drainedge breakdown device, enhanced V, hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.