標題: Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
作者: Chen, MC
Tsai, CW
Gu, SH
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2002
摘要: The impact of soft breakdown location on V, hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause V, hysteresis in gate bias switching. As a contrast, in a drainedge breakdown device, enhanced V, hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.
URI: http://hdl.handle.net/11536/18936
ISBN: 0-7803-7352-9
期刊: 40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
起始頁: 404
結束頁: 408
Appears in Collections:Conferences Paper