標題: | Pocket implantation effect on drain current flicker noise in analog nMOSFET devices |
作者: | Wu, JW Cheng, CC Chiu, KL Guo, JC Lien, WY Chang, CS Huang, GW Wang, TH 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | flicker noise;modeling;nonuniform threshold voltage;pocket implant |
公開日期: | 1-八月-2004 |
摘要: | The pocket implantation effect on drain current flicker noise in 0.13 mum CMOS process based high performance analog nMOSFETs is investigated. Our result shows that pocket implantation will significantly degrade device low-frequency noise primarily because of nonuniform threshold voltage distribution along the channel. An analytical flicker noise model to account for a pocket doping effect is proposed. In our model, the local threshold voltage and the width of the pocket implant region are extracted from the measured reverse short-channel effect, and the oxide trap density is extracted from a long-channel device. Good agreement between our model and the measurement result is obtained without other fitting parameters. |
URI: | http://dx.doi.org/10.1109/TED.2004.831369 http://hdl.handle.net/11536/26503 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2004.831369 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 51 |
Issue: | 8 |
起始頁: | 1262 |
結束頁: | 1266 |
顯示於類別: | 期刊論文 |