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dc.contributor.authorKuo, MCen_US
dc.contributor.authorChiu, KCen_US
dc.contributor.authorShih, THen_US
dc.contributor.authorLai, YJen_US
dc.contributor.authorYang, CSen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorChuu, DSen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorJeng, SYen_US
dc.contributor.authorShih, YTen_US
dc.contributor.authorLan, WHen_US
dc.date.accessioned2014-12-08T15:38:44Z-
dc.date.available2014-12-08T15:38:44Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.5145en_US
dc.identifier.urihttp://hdl.handle.net/11536/26504-
dc.description.abstractZn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters beta (161 K to 368K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by Gamma(T) = Gamma(0) + Gamma(a)T + Gamma(LOI)/[exp(homega(LOI)/kT) - 1] + Gamma(LO2)/[exp(homega(LO2)/kT) - 1] + Gamma(i)exp(-<E-b>/kT). The impurity binding energy, (E-b), was found to decrease as the Cd composition increases.en_US
dc.language.isoen_USen_US
dc.subjectZnCdSe epilayeren_US
dc.subjectmolecular beam epitaxyen_US
dc.subjectphotoluminescenceen_US
dc.subjectactivation energyen_US
dc.titleOptical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.5145en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue8Aen_US
dc.citation.spage5145en_US
dc.citation.epage5150en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000224841400012-
dc.citation.woscount8-
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