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dc.contributor.authorChang, KMen_US
dc.contributor.authorChu, JYen_US
dc.contributor.authorCheng, CCen_US
dc.date.accessioned2014-12-08T15:38:46Z-
dc.date.available2014-12-08T15:38:46Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2004.830523en_US
dc.identifier.urihttp://hdl.handle.net/11536/26528-
dc.description.abstractIndium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In0.1Ga0.9N layer is grown as an intermediate between ITO And p-GaN. The contact resistivity around 2.6 x 10(-2) Omega . cm(2) results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In0.1Ga0.9N-ITO contact samples also exhibits a lower value than that of the conventional ones.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectindium-tin-oxide (ITO)en_US
dc.subjectIn0.1Ga0.9Nen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.titleHighly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2004.830523en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue8en_US
dc.citation.spage1807en_US
dc.citation.epage1809en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000222884300005-
dc.citation.woscount16-
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