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dc.contributor.authorLi, SYen_US
dc.contributor.authorLin, Pen_US
dc.contributor.authorLee, CYen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:38:47Z-
dc.date.available2014-12-08T15:38:47Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1023/B:JMSE.0000032584.87349.22en_US
dc.identifier.urihttp://hdl.handle.net/11536/26553-
dc.description.abstractSingle crystal zinc oxide (ZnO) nanowires were prepared by using enhanced two-step vapor-liquid-solid (VLS) growth mechanism. The experimental results indicate that the growth rate and morphologies of the nanowires depends on the carrier gas ambient during the thermal reaction process. The ZnO nanowire grown with N-2, not only has the smaller diameter of about similar to 30 nm but also exhibits a higher growth rate and larger number of density of nanowires per unit area than those grown with Ar. The photoluminescence measurements show that the ZnO nanowires grown with N-2 have a stronger ultraviolet emission than those grown with Ar. (C) 2004 Kluwer Academic Publishers.en_US
dc.language.isoen_USen_US
dc.titleEffect of atmosphere on growth of single crystal zinc oxide nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/B:JMSE.0000032584.87349.22en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume15en_US
dc.citation.issue8en_US
dc.citation.spage505en_US
dc.citation.epage510en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000222212500003-
dc.citation.woscount8-
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