標題: Fabrication of trench-gate power MOSFETs by using a dual doped body region
作者: Juang, MH
Chen, WT
Ou-Yang, CI
Jang, SL
Lin, MJ
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-2004
摘要: Fabrication of trench-gate power MOSFETs by using a dual doped body region has been proposed to further improve the device performance. For the usual scheme that employs a uniform doped body region, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 1.0 Omegacm can be obtained via the proper choice of trench depth, epitaxial thickness, and body doping concentration. On the other hand, a dual doped body region is produced by dual high-energy and low-energy implantation of boron dopant. By this scheme, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 0. 8 Omegacm can be further achieved. Hence, with reducing the cell pitch size to be below 2 mum, this device fabrication scheme should be promising and practical for achieving a specific on-resistance smaller than 0. 1 mOmegacm2 and a blocking voltage higher than 30 V. (C) 2004 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2003.07.007
http://hdl.handle.net/11536/26588
ISSN: 0038-1101
DOI: 10.1016/j.sse.2003.07.007
期刊: SOLID-STATE ELECTRONICS
Volume: 48
Issue: 7
起始頁: 1079
結束頁: 1085
顯示於類別:期刊論文


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