標題: | Fabrication of trench-gate power MOSFETs by using a dual doped body region |
作者: | Juang, MH Chen, WT Ou-Yang, CI Jang, SL Lin, MJ Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Jul-2004 |
摘要: | Fabrication of trench-gate power MOSFETs by using a dual doped body region has been proposed to further improve the device performance. For the usual scheme that employs a uniform doped body region, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 1.0 Omegacm can be obtained via the proper choice of trench depth, epitaxial thickness, and body doping concentration. On the other hand, a dual doped body region is produced by dual high-energy and low-energy implantation of boron dopant. By this scheme, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 0. 8 Omegacm can be further achieved. Hence, with reducing the cell pitch size to be below 2 mum, this device fabrication scheme should be promising and practical for achieving a specific on-resistance smaller than 0. 1 mOmegacm2 and a blocking voltage higher than 30 V. (C) 2004 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2003.07.007 http://hdl.handle.net/11536/26588 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2003.07.007 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 48 |
Issue: | 7 |
起始頁: | 1079 |
結束頁: | 1085 |
Appears in Collections: | Articles |
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