標題: | Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application |
作者: | Cheng, YL Wang, YL Lan, JK Wu, SA Chang, SC Lo, KY Feng, MS 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-七月-2004 |
摘要: | Integration issues of metal line delamination from fluorinated silica glass (FSG) in deep submicron intermetal dielectric applications were investigated in this study. A metal line peeled off after a nonoptimized in situ deposition of undoped-silicon-glass (USG; SiO2) capping layer followed the post-FSG-chemical mechanical polishing N-2 treatment. It was found that higher bias power and longer process time of N-2 treatment led to more active fluorine species diffusing from the FSG films to the USG surface, which might react with subsequent Ti/TiN/W metal layer and result in metal delamination. Using plasma-enhanced N-2 treatment and ex situ USG capping with lower initial deposition temperature by extra cooling step, the stability of the FSG films was improved and resulted in a robust structure without metal peeling. (C) 2004 American Vacuum Society. |
URI: | http://dx.doi.org/10.1116/1.1767107 http://hdl.handle.net/11536/26653 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.1767107 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 22 |
Issue: | 4 |
起始頁: | 1792 |
結束頁: | 1796 |
顯示於類別: | 期刊論文 |