RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS

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DC 欄位	值	語言
dc.contributor.author	WU, CC	en_US
dc.contributor.author	TAI, K	en_US
dc.contributor.author	HUANG, TC	en_US
dc.contributor.author	HUANG, KF	en_US
dc.date.accessioned	2014-12-08T15:04:10Z	-
dc.date.available	2014-12-08T15:04:10Z	-
dc.date.issued	1994-01-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/68.265882	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2669	-
dc.description.abstract	A reliability study of gain-guided 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation.	en_US
dc.language.iso	en_US	en_US
dc.title	RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/68.265882	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	6	en_US
dc.citation.issue	1	en_US
dc.citation.spage	37	en_US
dc.citation.epage	39	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1994MX80100012	-
dc.citation.woscount	8	-
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