標題: The Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drain
作者: Yeh, Kuo-Liang
Hong, Wei-Lun
Guo, Jyh-Chyum
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2010
摘要: The impact of uni-axial strain from embedded SiGe in recessed S/D (e-SiGe) and Ge implanted S/D (i-SiGe) on effective mobility mu(eff), gate leakage current, short channel effect (SCE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior mu(eff) enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited mu(eff) improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance.
URI: http://hdl.handle.net/11536/26720
ISBN: 978-1-4244-6057-1
ISSN: 0149-645X
期刊: 2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT)
Volume: 
Issue: 
起始頁: 316
結束頁: 319
Appears in Collections:Conferences Paper