標題: Deep depletion phenomenon of SrTiO3 gate dielectric capacitor
作者: Liu, CY
Chen, BY
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-May-2004
摘要: SrTiO3 (STO) thin films were deposited on p-type silicon substrate by radio-frequency (rf) magnetron sputtering in an Ar-O-2 and Ar-N-2 mixed ambient to form metal/insulator/semiconductor (MIS) structure. We found the Schottky emission and Fowler-Nordheim tunneling mechanisms as responsible for the leakage current in the STO-based MIS structures at low and high electric fields under negative bias voltage, respectively. On the other hand, it was also observed that the generation current dominated the leakage mechanism at the high electric field under positive bias voltage due to the highly leaky insulator and lack of electrons. To maintain the leakage current at the higher electric field, the depletion width would broaden to generate more electrons, which is called deep depletion. Therefore, deep depletion was induced by high leakage current density under positive bias voltage. We also investigated the correlation between deep depletion and the leakage mechanism in STO-based gate dielectric capacitors under positive bias voltage to extract the generation lifetime of silicon substrates. The extracted generation lifetime can be used to examine the quality of silicon substrates after different processing conditions. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1704850
http://hdl.handle.net/11536/26768
ISSN: 0021-8979
DOI: 10.1063/1.1704850
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 95
Issue: 10
起始頁: 5602
結束頁: 5607
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